Beilstein Journal of Nanotechnology (Jun 2011)

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

  • Thomas H. Loeber,
  • Dirk Hoffmann,
  • Henning Fouckhardt

DOI
https://doi.org/10.3762/bjnano.2.39
Journal volume & issue
Vol. 2, no. 1
pp. 333 – 338

Abstract

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GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 × 1010 cm−2 and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between λ = 0.876 and 1.035 μm, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K.

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