Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

Abstract

GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 × 1010 cm−2 and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between λ = 0.876 and 1.035 μm, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K.

Keywords

• V/III flux ratio
• GaSb quantum dots
• growth temperature
• semiconductor laser
• Stranski–Krastanov growth