Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Abstract

Abstract The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon liquid‐gated nanowire field‐effect transistor devices are investigated in different concentrations of MgCl2 solutions. The critical concentration of MgCl2 solution for charge inversion at the solid‐liquid interface is verified using noise spectroscopy and confirmed using the capacitance‐voltage measurement technique. In this study, it is found that the Hooge parameter (αH) and the equivalent input noise (SU) can effectively reflect the ion behavior on the surface of the nanowire. Moreover, the noise curves for αH and SU indicate two turning points at concentrations of 10−4 and 10−1 m for a peak and a valley, respectively. The noise transformation is related to the behavior of ions near the solid‐liquid interface in solutions with different MgCl2 concentrations is revealed. The results show that noise spectroscopy is a powerful method for monitoring charge dynamic processes in the research field of biosensors.

Keywords

• equivalent input noise
• GAA (gate‐all‐around)
• Hooge parameter
• ion behavior
• nanowire field‐effect transistors
• noise spectroscopy