A Two-Stage Sub-Threshold Voltage Reference Generator Using Body Bias Curvature Compensation for Improved Temperature Coefficient

Abstract

Leakage diodes cause deviations in the thermal drift of ultra-low-power two-transistor (2T) reference circuits, resulting in either convex or concave output voltages against temperature, depending on the reference transistor types (n-type/p-type). This paper investigates the combined application of the convexity and concavity properties exhibited by the output voltage of complementary 2T references, one n-type and one p-type. By exploiting the body bias effect, this approach mitigates variations in the output reference voltage caused by temperature fluctuations. Software optimization is also used to obtain the required aspect ratios after formulating the required criteria for drain-induced barrier lowering (DIBL) elimination in the first stage. The performance of the proposed reference is evaluated by post-layout Monte Carlo simulations. In the range of 0 °C to 100 °C, the output reference voltage has an average temperature coefficient (TC) of 26.7 ppm/°C without any temperature trim. The output reference voltage is 195.5 mV with a standard deviation of 13.6 mV. The line sensitivity (LS) is 17.1 ppm/V in the supply voltage range of 0.5 V to 2.1 V at 25 °C. At 25 °C and 0.5 V, the power consumption is 28.8 pW, increasing to a maximum of 1.3 nW at 100 °C and 2.1 V.

Keywords

• ultra-low-power (ULP)
• voltage reference
• parasitic diodes
• two-stage
• leakage current
• LS enhancement