Methods for reducing write error rate in voltage-induced switching having prolonged tolerance of voltage-pulse duration

Abstract

Simulating the magnetization dynamics in a perpendicularly-magnetized free layer with Langevin equation, we investigated methods for reducing write error rate (WER) in voltage-induced switching with long tolerance of voltage-pulse duration (tp). The simulation results show that WER can be reduced by increasing the perpendicular anisotropy (Ku) before and after the application of voltage or by increasing both Ku and the in-plane external magnetic field.