Design and investigation of computation-in-memory based low power hybrid MTJ/CMOS logic gates

Abstract

AbstractHybrid magnetic tunnel junction (MTJ)/CMOS circuits based on the computation-in-memory (CIM) architecture are contemplated as the future generation of digital integrated circuits. It overcomes the limitations of von-Neumann architecture by offering solutions to problems such as memory wall and standby power dissipation. In this work, we have developed hybrid logic gates, such as AND/NAND, OR/NOR, and XOR/XNOR, for CIM architecture by integrating three terminal spin-Hall effect assisted spin transfer torque (SHE + STT) MTJs with standard CMOS. To write the MTJs an auto-write-stopping (AWS) circuit is adopted, whereas to perform the logic operations and produce the corresponding outputs, an improved sense amplifier circuit (ISA) is employed. All the hybrid logic gates are investigated for key performance indicators such as power, delay, device count, and power delay product (PDP). The results are compared with their conventional counterparts. The comparison reveals that the ISA + AWS-based hybrid gates dissipate 50.52% lower total power. The worst-case read delay of ISA + AWS hybrid AND/NAND, OR/NOR, and XOR/XNOR gates are 27.41%, 13.4%, and 21.28% lower. Meanwhile, the reduction of read PDP (write PDP) is 47.64% (37.09%), 25.78% (36.29%), and 39.31% (35.48%) observed with ISA + AWS hybrid AND/NAND, OR/NOR, and XOR/XNOR gates in comparison with the conventional counterparts. Hence the ISA + AWS gates are superior in terms of total power dissipation, worst read delay, and read/write PDP. Further, we have conducted Monte-Carlo simulations on all the logic circuits to study the parameter variations during fabrication.

Keywords

• Magnetic tunnel junction
• spin-Hall effect
• spin transfer torque
• hybrid logic gates
• computation-in-memory
• Pham DT, University of Birmingham, United Kingdom