Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation

Hongwei Chen; Sheng Ai; Ziling Nie; Fengrui Cui; Pengfei Yuan

doi:10.1109/ACCESS.2023.3245817

IEEE Access (Jan 2023)

Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation

Hongwei Chen,
Sheng Ai,
Ziling Nie,
Fengrui Cui,
Pengfei Yuan

Affiliations

Hongwei Chen: Naval University of Engineering, Hubei, Wuhan, China
Sheng Ai: ORCiD; Naval University of Engineering, Hubei, Wuhan, China
Ziling Nie: Naval University of Engineering, Hubei, Wuhan, China
Fengrui Cui: ORCiD; Naval University of Engineering, Hubei, Wuhan, China
Pengfei Yuan: Naval University of Engineering, Hubei, Wuhan, China

DOI: https://doi.org/10.1109/ACCESS.2023.3245817
Journal volume & issue: Vol. 11
pp. 27631 – 27640

Abstract

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After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on SiC-MOSFETs during ANPC commutation is analyzed. Finally, a short-loop commutation modulation strategy is proposed under the full working conditions of ANPC. The modulation strategy considers the influence of modulation carriers selection and dead time on ANPC commutation and optimizes the ANPC commutation loop to suppress the overvoltage on SiC-MOSFETs during ANPC commutation.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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