Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs
F. Elmourabit,
S. Dlimi,
A. El Moutaouakil,
F. Id Ouissaaden,
A. Khoukh,
L. Limouny,
H. Elkhatat,
A. El Kaaouachi
Affiliations
F. Elmourabit
Laboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco
S. Dlimi
Laboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco
A. El Moutaouakil
Department of Electrical and Communication Engineering, United Arab Emirates University, Al Ain P.O. Box 15551, United Arab Emirates
F. Id Ouissaaden
Laboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco
A. Khoukh
Laboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco
L. Limouny
Equipe des Energies Nouvelles et Ingénierie des Matériaux (ENIM), Laboratoire de Sciences et Techniques de L’ingénieur (LSTI), Physics Department, Faculty of Sciences and Technics Errachidia, Moulay Ismail University, Meknes 50050, Morocco
H. Elkhatat
Electrical Engineering Department, National School of Applied Sciences of Tangier (ENSAT), University of Abdelmalek Essaadi, B.P. 416, Tangier 93000, Morocco
A. El Kaaouachi
Department of Physics, Faculty of Sciences, Ibn Zohr University, B.P. 1136, Agadir 80000, Morocco
Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, nsc (approximately 0.72×1011 cm−2), which marks the metal insulator transition (MIT). In close proximity to the nsc, the conductivity exhibits a linear dependence on the temperature (T). By examining the extrapolated conductivity at the absolute zero temperature (T = 0), denoted as σ0, as a function of the electron density ns, we identify two distinct regimes with varying σ0(ns) patterns, indicating the existence of two different phases. The transition from one of these two regimes to another, coinciding with nsc, is abrupt and serves as the focus of our investigation. Our aim is to establish the possibility of a percolation type transition in the 2D-Si-MOSFETs’ sample. In fact, we observed that the model of percolation is applicable only for densities very close to nsc*=n2 (where n2 is the linear extrapolation of σ0), indicating the percolation type transition essentially represents a phase transition at the zero temperature.
