A steep switching WSe2 impact ionization field-effect transistor

Haeju Choi; Jinshu Li; Taeho Kang; Chanwoo Kang; Hyeonje Son; Jongwook Jeon; Euyheon Hwang; Sungjoo Lee

doi:10.1038/s41467-022-33770-3

Nature Communications (Oct 2022)

A steep switching WSe2 impact ionization field-effect transistor

Haeju Choi,
Jinshu Li,
Taeho Kang,
Chanwoo Kang,
Hyeonje Son,
Jongwook Jeon,
Euyheon Hwang,
Sungjoo Lee

Affiliations

Haeju Choi: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University
Jinshu Li: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University
Taeho Kang: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University
Chanwoo Kang: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University
Hyeonje Son: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University
Jongwook Jeon: Department of Electrical and Electronics Engineering, Konkuk University
Euyheon Hwang: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University
Sungjoo Lee: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University

DOI: https://doi.org/10.1038/s41467-022-33770-3
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 9

Abstract

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The potential energy efficiency of impact ionization field-effect transistors (I2FETs) is usually limited by stringent operational conditions. Here, the authors report I2FETs based on 2D WSe2, showing average subthreshold slopes down to 2.3 mV/dec and on/off ratios of ~106 at room temperature and bias voltages <1 V.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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