Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer

Yanbo Shang; Pu Wang; Lingbo Jia; Xingcheng Li; Weitao Lian; Peisen Qian; Muqing Chen; Tao Chen; Yalin Lu; Shangfeng Yang

doi:10.26599/NRE.2023.9120073

Nano Research Energy (Sep 2023)

Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer

Yanbo Shang,
Pu Wang,
Lingbo Jia,
Xingcheng Li,
Weitao Lian,
Peisen Qian,
Muqing Chen,
Tao Chen,
Yalin Lu,
Shangfeng Yang

Affiliations

Yanbo Shang: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Pu Wang: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Lingbo Jia: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Xingcheng Li: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Weitao Lian: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Peisen Qian: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Muqing Chen: School of Environment and Civil Engineering, Dongguan University of Technology, Dongguan 523808, China
Tao Chen: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Yalin Lu: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Shangfeng Yang: CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China

DOI: https://doi.org/10.26599/NRE.2023.9120073
Journal volume & issue: Vol. 2, no. 3
pp. e9120073 – e9120073

Abstract

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All-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, which are mainly based on univocal defect passivation of perovskite layer. Herein, we incorporated a bis-dimethylamino-functionalized fullerene derivative (abbreviated as PCBDMAM) as an interlayer between ZnO electron transport layer (ETL) and all-inorganic CsPbI2.25Br0.75 perovskite layer, accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices. Upon spin-coating PCBDMAM onto ZnO ETL, the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds. In addition, PCBDMAM incorporation affords effective passivation of PbI and IPb antisite defects within the atop perovskite layer as well via coordination bonding with Pb2+. As a result, the regular-structure planar CsPbI2.25Br0.75 PSC device delivers a champion power conversion efficiency (PCE) of 17.04%, which surpasses that of the control device (15.44%). Moreover, the PCBDMAM-incorporated PSC device maintains ~ 80% of its initial PCE after 600 h heating at 85 °C hot plate in N2 atmosphere, whereas PCE of the control device degrades rapidly to ~ 62% after 460 h heating under identical conditions. Hence, PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device.

Published in Nano Research Energy

ISSN: 2791-0091 (Print); 2790-8119 (Online)
Publisher: Tsinghua University Press
Country of publisher: China
LCC subjects: Science: Chemistry; Science: Physics
Website: https://www.sciopen.com/journal/2791-0091

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