An Optoelectronic Synapse Based on Two‐Dimensional Violet Phosphorus Heterostructure

Abstract

Abstract Neuromorphic computing can efficiently handle data‐intensive tasks and address the redundant interaction required by von Neumann architectures. Synaptic devices are essential components for neuromorphic computation. 2D phosphorene, such as violet phosphorene, show great potential in optoelectronics due to their strong light‐matter interactions, while current research is mainly focused on synthesis and characterization, its application in photoelectric devices is vacant. Here, the authors combined violet phosphorene and molybdenum disulfide to demonstrate an optoelectronic synapse with a light‐to‐dark ratio of 106, benefiting from a significant threshold shift due to charge transfer and trapping in the heterostructure. Remarkable synaptic properties are demonstrated, including a dynamic range (DR) of > 60 dB, 128 (7‐bit) distinguishable conductance states, electro‐optical dependent plasticity, short‐term paired‐pulse facilitation, and long‐term potentiation/depression. Thanks to the excellent DR and multi‐states, high‐precision image classification with accuracies of 95.23% and 79.65% is achieved for the MNIST and complex Fashion‐MNIST datasets, which is close to the ideal device (95.47%, 79.95%). This work opens the way for the use of emerging phosphorene in optoelectronics and provides a new strategy for building synaptic devices for high‐precision neuromorphic computing.

Keywords

• 2D materials
• dynamic range
• multi‐states
• optoelectronic synapse
• violet phosphorus