Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity

Abstract

The results of a study of the effect of the anisotropic elastic deformation up to 2% relative elongation on the change in the Fermi surface cross section of Sn-doped Bi wires in a glass envelope with the (1011) crystallographic orientation along the axis of elongation have been described. Changes in the Fermi surface cross section are recorded using Shubnikov-de Haas (ShdH) oscillations. It has been shown that the elastic deformation of Bi0.07at%Sn wires is accompanied by an electronic topological transition at which the carriers of two hole ellipsoids L2,3 that are equivalent with respect to the axis of elongation and exhibit high charge carrier mobilities flow into hole ellipsoid L1 with low carrier mobilities up to a topological transition at which the conductivity occurs only through the holes of hole ellipsoids L1 and T located at the L and T points of the Brillouin zone. The temperature and deformation dependences of resistance R and thermoelectric power α have been studied. It has been found that the size effect in the Bi0.07at%Sn wires is evident from the formation of a maximum in R(T) and the sign inversion in α(T) that linearly depend on the reciprocal of diameter 1/d. It has been shown that the deformation dependence of resistance and thermoelectric power represent the electronic topological transition that occurs during tensile deformation.