This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significant marginal improvement (as compared to forward measurements only) it is expected that the device under test should appreciably deviate from unidirectionality. For this reason, the source/load-pull technique is applied to frequencies at which the considered devices are still usable but their reverse noise factor exhibits a measurable dependence on the output terminations. Details on the test bench set up to the purpose, covering the 20–40 GHz frequency range, are provided. A characterization campaign on a 60 nm gate length, 4×35 µm GaN-on-Si HEMT fabricated by OMMIC is illustrated.
