On large-signal modeling of GaN HEMTs: past, development and future

Abstract

In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile communications, object detection and consumer electronics, etc. As a critical intermediary between GaN HEMT devices and circuit-level applications, GaN HEMT large-signal models play a pivotal role in the design, application and development of GaN HEMT devices and circuits. This review provides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades. Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model was offered, including large-signal measurement setups, classical formulation methods, model classification and non-ideal effects, etc. In order to better serve follow-up researches, this review also explored potential future directions for the development of GaN HEMT large-signal modeling.

Keywords

• Gallium nitride
• High electron mobility transistors
• Large-signal model