Impact ionization by hot carriers in a black phosphorus field effect transistor

Faisal Ahmed; Young Duck Kim; Zheng Yang; Pan He; Euyheon Hwang; Hyunsoo Yang; James Hone; Won Jong Yoo

doi:10.1038/s41467-018-05981-0

Nature Communications (Aug 2018)

Impact ionization by hot carriers in a black phosphorus field effect transistor

Faisal Ahmed,
Young Duck Kim,
Zheng Yang,
Pan He,
Euyheon Hwang,
Hyunsoo Yang,
James Hone,
Won Jong Yoo

Affiliations

Faisal Ahmed: School of Mechanical Engineering, Sungkyunkwan University
Young Duck Kim: Department of Mechanical Engineering, Columbia University
Zheng Yang: SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University
Pan He: Department of Electrical and Computer Engineering, and NUSNNI, National University of Singapore
Euyheon Hwang: SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University
Hyunsoo Yang: Department of Electrical and Computer Engineering, and NUSNNI, National University of Singapore
James Hone: Department of Mechanical Engineering, Columbia University
Won Jong Yoo: School of Mechanical Engineering, Sungkyunkwan University

DOI: https://doi.org/10.1038/s41467-018-05981-0
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 7

Abstract

Read online

Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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