Фізика і хімія твердого тіла (Sep 2017)

Structure and Vibrational Spectra of thin Films β-Ga<sub>2</sub>O<sub>3</sub>

  • O. M. Bordun,
  • B. O. Bordun,
  • I. I. Medvid,,
  • I. Yo. Kukharskyy,
  • V. V. Ptashnyk,
  • M. V. Partyka

DOI
https://doi.org/10.15330/pcss.17.4.515-519
Journal volume & issue
Vol. 17, no. 4
pp. 515 – 519

Abstract

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The structure, phase composition and surface morphology of thin films β-Ga<sub>2</sub>O<sub>3</sub>, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga<sub>2</sub>O<sub>3</sub> - fused quartz substrate υ-SiO<sub>2</sub> in region 400–1600 cm<sup>-1</sup> at 295 K were measured. The peaks in the spectrum of films b-Ga<sub>2</sub>O<sub>3</sub>, associated with vibration of Ga – O fragments in structural tetrahedral GaO<sub>4</sub> and octahedral GaO<sub>6</sub> complexes was interpreted.Key words: gallium oxide, thin films, vibrational spectra.