The effect of inserted layers on the anomalous Hall effect and perpendicular magnetic anisotropy in Ta/CoFeB/MgO heterostructures

Minghua Li; Shuai Fang; Hui Shi; Shaolong Jiang; Gang Han; Rongsheng Gao; Xudan Zhang; Xiaotong Liu; Jiafang Li; Yixin Zhu; Jinshuai Chen; Guanghua Yu

doi:10.1063/1.5019988

AIP Advances (Jul 2018)

The effect of inserted layers on the anomalous Hall effect and perpendicular magnetic anisotropy in Ta/CoFeB/MgO heterostructures

Minghua Li,
Shuai Fang,
Hui Shi,
Shaolong Jiang,
Gang Han,
Rongsheng Gao,
Xudan Zhang,
Xiaotong Liu,
Jiafang Li,
Yixin Zhu,
Jinshuai Chen,
Guanghua Yu

Affiliations

Minghua Li: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Shuai Fang: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Hui Shi: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Shaolong Jiang: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Gang Han: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Rongsheng Gao: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Xudan Zhang: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Xiaotong Liu: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Jiafang Li: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Yixin Zhu: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Jinshuai Chen: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Guanghua Yu: Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China

DOI: https://doi.org/10.1063/1.5019988
Journal volume & issue: Vol. 8, no. 7
pp. 075103 – 075103-6

Abstract

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In this work, Ta/M/CoFeB/MgO/Ta multilayers were designed to investigate the effect of M insertion on the anomalous Hall effect (AHE) and perpendicular magnetic anisotropy (PMA). Once inserted, Bi did not remain at the interface of Ta and CoFeB; it migrated to the surface of the films, which was not beneficial to PMA. X-ray photoelectron spectroscopic analyses revealed that the segregation of Ta was partly suppressed by the insertion of an Mo, Hf or Pt layer. However, the formation of a CoPt (or FePt) alloy decreased the PMA in the case of a Pt layer. The sample with Hf and Mo still exhibited a clear PMA after annealing at a 350 and 500 °C, respectively.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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