Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb_1-XSn_XTe

Abstract

A multi-wavelength pulse is generated using chemical vapor deposition method (CVD) to fabricate the topological crystalline insulator (TCI) Pb1-XSnXTe as a saturated absorber (SA). Compared with other SA materials, Pb1-XSnXTe have advantages of narrow bandgap and high optical absorption in the near-infrared region. The laser produced a stable four-wavelength lasing configuration characterized by a wavelength spacing of approximately 2 nm, with pulse duration, repetition rate, and signal-to-noise ratio (SNR) of 0.899 to 0.854 µs, 1.08 to 1.15 MHz, and 31.5 dB, respectively. The results indicate that the Pb1-XSnXTe-SA is suitable for pulsed generation in the near-infrared region and its potential in various fields, including super-resolution imaging, high-density optical storage, and three-dimensional laser lithography.

Keywords

• $_{1-X} Sn_{X}Te$ %22%2C%22default_operator%22%3A%22AND%22%7D%7D%7D"> Pb<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_{1-X} Sn_{X}Te$</tex-math> </inline-formula> </named-content>
• saturable absorber
• topological crystalline insulator
• pulse laser