Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

Zhuo Wang; Zhao Qi; Longfei Liang; Ming Qiao; Zhaoji Li; Bo Zhang

doi:10.1186/s11671-019-3017-8

Nanoscale Research Letters (May 2019)

Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

Zhuo Wang,
Zhao Qi,
Longfei Liang,
Ming Qiao,
Zhaoji Li,
Bo Zhang

Affiliations

Zhuo Wang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Zhao Qi: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Longfei Liang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Ming Qiao: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Zhaoji Li: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Bo Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

DOI: https://doi.org/10.1186/s11671-019-3017-8
Journal volume & issue: Vol. 14, no. 1
pp. 1 – 7

Abstract

Read online

Abstract A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V h). Compared with the measured V h of 1.8 V of low-voltage triggered silicon-controlled rectifier (LVTSCR), the V h of HHV-SCR can be increased to 8.1 V while maintaining a sufficiently high failure current (I t2 > 2.6 A). An improvement of over four times in the figure of merit (FOM) is achieved.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

About the journal

Abstract

Keywords