Research of Gate-Tunable Phase Modulation Metasurfaces Based on Epsilon-Near-Zero Property of Indium-Tin-Oxide

Abstract

In this paper, we proposed a reflection phase electrically tunable metasurface composed of an Au/Al2O3/ITO/Au grating structure. This antenna array can achieve a broad phase shift continuously and smoothly from 0° to 320° with a 5.85 V applied voltage bias. Tunability arises from field-effect modulation of the carrier concentrations or accumulation layer at the Al2O3/ITO interface, which excites electric and magnetic resonances in the epsilon-near-zero region. To make the reflected phase tuning range as wide as possible, some of the intensity of the reflected light is lost due to the excited surface plasmon effect. Simulation results show that the effect of optimal phase modulation can be realized at a wavelength range of 1550 nm by modulating the carrier concentration in our work. Additionally, we utilized an identical 13-unit array metasurface to demonstrate its application to the beam steering function. This active optical metasurface can enable a new realm of applications in ultrathin integrated photonic circuits.

Keywords

• phase modulation
• field-effect modulation
• indium-tin-oxide
• epsilon-near-zero materials
• surface plasmons