Materials Research Express (Jan 2020)
The influence of excessive H2 during barrier growth on InGaN light-emitting diodes
- Yangfeng Li,
- Shen Yan,
- Die Junhui,
- Xiaotao Hu,
- Yimeng Song,
- Zhen Deng,
- Chunhua Du,
- Wenqi Wang,
- Ziguang Ma,
- Lu Wang,
- Haiqiang Jia,
- Wenxin Wang,
- Junming Zhou,
- Yang Jiang,
- Hong Chen
Affiliations
- Yangfeng Li
- ORCiD
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Shen Yan
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Die Junhui
- Fine Optical Engineering Research Center, Chengdu, 610041, People’s Republic of China
- Xiaotao Hu
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Yimeng Song
- School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing , Beijing 100083, People’s Republic of China
- Zhen Deng
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China; The Yangtze River Delta Physics Research Center, Liyang 213000, People’s Republic of China
- Chunhua Du
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China; The Yangtze River Delta Physics Research Center, Liyang 213000, People’s Republic of China
- Wenqi Wang
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Ziguang Ma
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Lu Wang
- ORCiD
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Haiqiang Jia
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of China
- Wenxin Wang
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of China
- Junming Zhou
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Yang Jiang
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
- Hong Chen
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of China
- DOI
- https://doi.org/10.1088/2053-1591/abc18f
- Journal volume & issue
-
Vol. 7,
no. 10
p. 105907
Abstract
The influence of excessive H _2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H _2 treatment. Temperature-dependent photoluminescence (TDPL) reveals an increase of the density and a decrease of the activation energy of deep non-radiative recombination centers in the H _2 treated LEDs. The external quantum efficiency (EQE) of the LEDs suffers from excessive H _2 treatment. The leakage current on the reverse and forward sides of the LEDs are reduced significantly when treated with H _2 , which may be due to the suppressed Poole–Frenkel effect.
Keywords
