Nature Communications (Apr 2019)

Spontaneous current constriction in threshold switching devices

  • Jonathan M. Goodwill,
  • Georg Ramer,
  • Dasheng Li,
  • Brian D. Hoskins,
  • Georges Pavlidis,
  • Jabez J. McClelland,
  • Andrea Centrone,
  • James A. Bain,
  • Marek Skowronski

DOI
https://doi.org/10.1038/s41467-019-09679-9
Journal volume & issue
Vol. 10, no. 1
pp. 1 – 8

Abstract

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Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.