Nature Communications (Sep 2019)
Carrier lifetime enhancement in halide perovskite via remote epitaxy
- Jie Jiang,
- Xin Sun,
- Xinchun Chen,
- Baiwei Wang,
- Zhizhong Chen,
- Yang Hu,
- Yuwei Guo,
- Lifu Zhang,
- Yuan Ma,
- Lei Gao,
- Fengshan Zheng,
- Lei Jin,
- Min Chen,
- Zhiwei Ma,
- Yuanyuan Zhou,
- Nitin P. Padture,
- Kory Beach,
- Humberto Terrones,
- Yunfeng Shi,
- Daniel Gall,
- Toh-Ming Lu,
- Esther Wertz,
- Jing Feng,
- Jian Shi
Affiliations
- Jie Jiang
- Department of Materials Science and Engineering, Kunming University of Science and Technology
- Xin Sun
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute
- Xinchun Chen
- State Key Laboratory of Tribology, Tsinghua University
- Baiwei Wang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- Zhizhong Chen
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- Yang Hu
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- Yuwei Guo
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- Lifu Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- Yuan Ma
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing
- Lei Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing
- Fengshan Zheng
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich
- Lei Jin
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich
- Min Chen
- School of Engineering, Brown University
- Zhiwei Ma
- School of Engineering, Brown University
- Yuanyuan Zhou
- School of Engineering, Brown University
- Nitin P. Padture
- School of Engineering, Brown University
- Kory Beach
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute
- Humberto Terrones
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute
- Yunfeng Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- Daniel Gall
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- Toh-Ming Lu
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute
- Esther Wertz
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute
- Jing Feng
- Department of Materials Science and Engineering, Kunming University of Science and Technology
- Jian Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
- DOI
- https://doi.org/10.1038/s41467-019-12056-1
- Journal volume & issue
-
Vol. 10,
no. 1
pp. 1 – 12
Abstract
Crystallographic dislocation has proven harmful to the carrier dynamics in conventional semiconductors but it is unexplored in metal halide perovskites. Here Jiang et al. grow remote epitaxial perovskite films on graphene with density-controlled dislocations and confirm their negative impact.
