Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD

Abstract

Gallium oxide (Ga2O3) is a wide-bandgap oxide semiconductor, with a bandgap of ∼4.9 eV, making it a promising material for power device applications. This study focuses on the effect of hydrochloric acid addition on the growth rate in homoepitaxial growth of β-Ga2O3 using a mist chemical vapor deposition method. For homoepitaxial growth on a (001) β-Ga2O3 substrate, we introduced different concentrations of HCl into the source solution to assess its impact on the growth rate, crystal structures, and surface morphologies of the films. At a growth temperature of 900 °C, HCl addition linearly increased film thickness, enhancing the growth rate by 4.8 times with 9.09 vol. % HCl. No peaks associated with other phases were exhibited by each sample, indicating pure homoepitaxial growth. When comparing samples with similar film thicknesses, the root-mean-square (rms) roughness was enhanced by 1/7 with an increase in the HCl concentration. However, at 800 °C, an increasing solution concentration caused pronounced step bunching and elevated rms roughness, in contrast with the minimal effect observed at 900 °C. In experiments with hydrochloric acid addition at 900 °C, we observed a striped morphology, which maintained consistent rms roughness despite higher temperature.