Optimization of p-GaP reflective electrode for vertical LED

L.L. Han; Z. Deng; Z.G. Ma; W.X. Wang; H. Chen; C.H. Du; H.Q. Jia

Results in Physics (Nov 2021)

Optimization of p-GaP reflective electrode for vertical LED

L.L. Han,
Z. Deng,
Z.G. Ma,
W.X. Wang,
H. Chen,
C.H. Du,
H.Q. Jia

Affiliations

L.L. Han: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Z. Deng: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; The Yangtze River Delta Physics Research Center, Liyang, Jiangsu 213000, China
Z.G. Ma: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
W.X. Wang: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
H. Chen: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
C.H. Du: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; The Yangtze River Delta Physics Research Center, Liyang, Jiangsu 213000, China; Corresponding authors at: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
H.Q. Jia: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China; Corresponding authors at: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Journal volume & issue: Vol. 30
p. 104812

Abstract

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The contact resistivity and reflectance of p-GaP metal electrode play an important role in the application of GaP related optoelectronic and microelectronic devices. After annealing at 420 °C for 1 min, the lowest contact resistivity of Au/Zn contacts to p-GaP can reach 4.11×10−6 Ω·cm2, but the reflectivity of the electrode deteriorates. In this paper, Au(2)/Au(1)/Zn metal electrode was prepared on p-GaP surface by rapid annealing of Au(1)/Zn followed by evaporation of a layer of Au(2). In this process, both high reflectivity and low contact resistivity of the reflective electrode can be obtained simultaneously. After annealing at 420 °C for 1 min in nitrogen atmosphere, the specific contact resistivity of the electrode is 4.04×10−6 Ω·cm2, and the reflectivity at 630 nm is 94.5%.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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