Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition
Sukittaya Jessadaluk,
Narathon Khemasiri,
Navaphun Kayunkid,
Adirek Rangkasikorn,
Supamas Wirunchit,
Narin Tammarugwattana,
Kitipong Mano,
Chanunthorn Chananonnawathorn,
Mati Horprathum,
Annop Klamchuen,
Sakon Rahong,
Jiti Nukeaw
Affiliations
Sukittaya Jessadaluk
King Mongkut’s Institute of Technology Ladkrabang, College of Materials Innovation and Technology, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
Narathon Khemasiri
Research Institute for Electronic Science, Hokkaido University N20 W10, Kita, Sapporo 001-0020, Japan
Navaphun Kayunkid
King Mongkut’s Institute of Technology Ladkrabang, College of Materials Innovation and Technology, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
Adirek Rangkasikorn
King Mongkut’s Institute of Technology Ladkrabang, College of Materials Innovation and Technology, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
Supamas Wirunchit
King Mongkut’s Institute of Technology Ladkrabang, College of Materials Innovation and Technology, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
Narin Tammarugwattana
Department of Instrumentation and Control Engineering, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
Kitipong Mano
Department of Engineering Education, School of Industrial Education and Technology, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
Chanunthorn Chananonnawathorn
Opto-Electrochemical Sensing Research Team, Spectroscopic and Sensing Devices Research Group, National Electronics and Computer Technology Center, Pathum Thani 12120, Thailand
Mati Horprathum
Opto-Electrochemical Sensing Research Team, Spectroscopic and Sensing Devices Research Group, National Electronics and Computer Technology Center, Pathum Thani 12120, Thailand
Annop Klamchuen
National Nanotechnology Center, National Science and Technology Development Agency, Pathum Thani 12120, Thailand
Sakon Rahong
King Mongkut’s Institute of Technology Ladkrabang, College of Materials Innovation and Technology, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
Jiti Nukeaw
King Mongkut’s Institute of Technology Ladkrabang, College of Materials Innovation and Technology, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand
This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb2O3:ZnO-ablating target. By increasing the content of Sb2O3 (wt.%) in the target, Sb3+ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb2O3. The substituted Sb species in the Zn site (SbZn3+ and SbZn+) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (SbZn–2VZn) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb2O3 content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions.
