Growing Sb2Se3 Films Enriched with Selenium Using Chemical Molecular Beam Deposit

Abstract

This study explores the growth of Sb2Se3 films on soda-lime glass (SLG) surfaces using the chemical molecular beam deposition (CMPD) method at a substrate temperature of 500°C. High-purity binary compounds, Sb2Se3 and Se, were employed as source materials for film deposition. Scanning electron microscopy (SEM) was employed to investigate the morphological characteristics of the Sb2Se3 films. Furthermore, the influence of temperature on the grain size and crystallographic orientation in selenium films was examined. Samples were obtained from a selenium source at temperatures of 370°C and 430°C. The results indicate that increasing the temperature of the selenium source results in the formation of larger grains and the presence of rod-shaped grains of Sb2Se3 aligned parallel to the substrate. A sample obtained at 370°C exhibited grains larger than 2 µm in size, evenly distributed across the substrate surface, indicating a uniform growth process. In contrast, when the temperature of the selenium source was raised to 430°C, considerably larger grains measuring approximately 4 μm were detected on the film surface substrate. X-ray diffraction analysis was conducted to gain insights into the crystalline phases and crystal structure of the Sb2Se3 films synthesized under different temperatures of the selenium source. The X-ray diffraction patterns displayed prominent peaks corresponding to the crystallographic planes (221) and (211), indicating the presence of strong crystalline phases. Additionally, peaks such as (020), (120), and (310) were observed in the X-ray patterns, further confirming the crystallinity of the films.

Keywords

• x-ray diffraction
• chemical molecular beam deposition
• sb2se3
• selenium temperature