Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor

Abstract

A large spin-splitting is essential for spintronic devices. Here, the authors observe a spontaneous spin-splitting energy of between 31.7 and 50 millielectronvolts in n-type indium iron arsenide at temperatures up to several tens of Kelvin, challenging the conventional theory of ferromagnetic semiconductors.