Analysis and Verification of a New Photoelectric-Motivated Memristor Based on Avalanche Photo-Diode

Abstract

This work reports a device based on photoelectric-motivated memristor. In this paper, the simulation model of photoelectric-motivated memristor was established, and we stimulated the memristive characteristics by this model. The device goes from the non-triggered state to the triggered state, then back to non-triggered state and we obtained the simulation results. Then the current curve and the voltage curve fit a hysteresis loop of this device. The results of this memristive characteristics are verified by the test of the real photoelectric-motivated memristor device. According to the memristive properties of this device, it can be used to study the memristor circuit integrated with avalanche photo-diode and signal processing circuit, and applied in neural network and a new type of photoelectric memory.

Keywords

• Photoelectric-motivated memristor
• hysteresis loop
• memristive characteristics