IEEE Access (Jan 2024)

Recent Development of High-PCE CMOS RF-DC Rectifier With Wide P<sub>IN</sub> Dynamic Range: Strategies and Trends&#x2014;Review

  • Boon Chiat Terence Teo,
  • Wu Cong Lim,
  • Xian Yang Lim,
  • Venkadasamy Navaneethan,
  • Liter Siek

DOI
https://doi.org/10.1109/ACCESS.2024.3407372
Journal volume & issue
Vol. 12
pp. 79104 – 79117

Abstract

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This review explores the various strategies used to widen the input power (P $_{\mathrm {IN}}$ ) dynamic range of an RF-DC rectifier and analyzes the recent developments reported in the literature. This development is insightful as the PIN dynamic range is crucial for systems adopting wireless power transfer (WPT) or wireless energy harvesting (EH) for both near- and far-field applications to mitigate the reliance on the battery as its primary power source. However, the RF-DC rectifier exhibits non-linear characteristics, resulting in a narrow PIN band for reasonable power conversion efficiency (PCE). The different strategies reported in the literature are discussed and classified into three main concepts: reconfigurable, multi-path, and self-biased rectifiers. Despite having different design constraints and considerations during the inception of the reported work in the literature, this article analyzes and provides the general development trend, merits, and demerits.

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