IEEE Access (Jan 2023)

New Compact Load Network for Doherty Power Amplifiers Based on L-Section Matching Network of the Carrier Amplifier and Post-Matching Network

  • Yifei Chen,
  • Woojin Choi,
  • Jaekyung Shin,
  • Hyeongjin Jeon,
  • Sooncheol Bae,
  • Soohyun Bin,
  • Sunwoo Nam,
  • Young Chan Choi,
  • Hyunuk Kang,
  • Kang-Yoon Lee,
  • Keum Cheol Hwang,
  • Youngoo Yang

DOI
https://doi.org/10.1109/ACCESS.2023.3291219
Journal volume & issue
Vol. 11
pp. 66478 – 66487

Abstract

Read online

This paper presents a new compact load network for Doherty power amplifiers (DPAs) with only two matching networks, such as an output matching network of the carrier amplifier, and the post-matching network (PMN), even in the presence of parasitic circuits of the packaged transistor. The load network of the carrier amplifier can be configured using a simple L-section matching structure for the complex load impedance. No matching network is required between the peaking amplifier and the current combining junction. As a result, the proposed load network can have a very compact structure with only a short transmission line, and a shunt element for the carrier amplifier, in addition to the PMN. To verify the proposed circuit, a DPA based on two packaged GaN-HEMTs was designed and implemented to have a peak output power of more than 43 dBm for the 3.5-4.0 GHz band. By the measurement results using a 5G NR signal with a peak-to-average power ratio (PAPR) of 7.9 dB and a signal bandwidth of 100 MHz, a power gain of more than 10.5 dB, and a drain efficiency (DE) of 49.5-55.4% at an average power of 36.5 dBm in the frequency band was exhibited. After applying digital pre-distortion (DPD), an adjacent channel leakage power ratio (ACLR) of -51.0 dBc was achieved.

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