EBIC studies of minority electron diffusion length in undoped p-type gallium oxide
Leonid Chernyak,
Seth Lovo,
Jian-Sian Li,
Chao-Ching Chiang,
Fan Ren,
Stephen J. Pearton,
Corinne Sartel,
Zeyu Chi,
Yves Dumont,
Ekaterine Chikoidze,
Alfons Schulte,
Arie Ruzin,
Ulyana Shimanovich
Affiliations
Leonid Chernyak
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Seth Lovo
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Jian-Sian Li
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Chao-Ching Chiang
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Fan Ren
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Stephen J. Pearton
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
Corinne Sartel
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Zeyu Chi
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Yves Dumont
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Ekaterine Chikoidze
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Alfons Schulte
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Arie Ruzin
School of Electrical Engineering, Tel Aviv University, Tel Aviv 69978, Israel
Ulyana Shimanovich
Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
