Journal of Materials Research and Technology (May 2022)

The role of the g-C3N4 precursor on the P doping using HCCP as a source of phosphorus

  • Vlastimil Matějka,
  • Radim Škuta,
  • Kryštof Foniok,
  • Vlastimil Novák,
  • Daniel Cvejn,
  • Alexandr Martaus,
  • Monika Michalska,
  • Jiří Pavlovský,
  • Petr Praus

Journal volume & issue
Vol. 18
pp. 3319 – 3335

Abstract

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This work describes the doping of graphitic carbon nitride (g-C3N4) with phosphorus performed by 2-h heat treatment of a mechanical mixture of g-C3N4 precursor (urea, dicyandiamide, and guanidine hydrochloride) with hexachlorocyclotriphosphazene at 525 °C. The amount of fixed phosphorus in the resulting g-C3N4 structure reached approximately 10 wt% in the case of the urea precursor. For the other two precursors, the fixed phosphorus content in the final products was less than 5 wt%. Several experimental techniques (SEM, XRFS, TG, XRD, FTIR, physisorption of nitrogen, UV-VIS DRS, PL spectroscopy, and electrochemical analysis) were used to characterize the prepared samples. The photodegradation activity of the samples was determined by degradation of Rhodamine B under irradiation with visible light (420 nm). In general, the photodegradation activity of the samples was dependent on the phosphorus content. The highest photodegradation activity was obtained for urea-based g-C3N4 doped with the lowest phosphorus content, with a threefold increase in calcination product yield. The mechanism of incorporation of phosphorus into the final g-C3N4 structure was explained as a two-phase process.

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