Cerâmica (Mar 2002)

Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

  • M. I. B. Bernardi,
  • E. J. H. Lee,
  • P. N. Lisboa-Filho,
  • E. R. Leite,
  • E. Longo,
  • A. G. Souza

DOI
https://doi.org/10.1590/S0366-69132002000100009
Journal volume & issue
Vol. 48, no. 305
pp. 38 – 42

Abstract

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The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

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