2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications

Abstract

Abstract Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high‐density, low‐cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic properties including large light absorption coefficient, fast ion migration, long carrier diffusion length, low trap density, high defect tolerance. Among MHPs, 2D halide perovskites have exotic layered structure and great environment stability as compared with 3D counterparts. Herein, recent advances of 2D MHPs for the RS memories and artificial synapses realms are comprehensively summarized and discussed, as well as the layered structure properties and the related physical mechanisms are presented. Furthermore, the current issues and developing roadmap for the next‐generation 2D MHPs RS memories and artificial synapse are elucidated.

Keywords

• 2D halide perovskite
• artificial synapses
• resistive switching memory
• Ruddlesden–Popper