High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, and quantum applications. This paper reports antimony-based separate absorption, charge, and multiplication structure APDs on InP substrates. Al0.7In0.3As0.79Sb0.21 is used for the multiplier region, and InGaAs is used as the absorber. The excess noise is comparable to that of silicon APDs; the k-value is more than one order of magnitude lower than that of APDs that use InP or InAlAs for the gain region. The external quantum efficiency without an anti-reflection coating at 1550 nm is 57%. The gradient of the temperature coefficient of avalanche breakdown voltage is 6.7 mV/K/μm, which is less than one-sixth that of InP APDs, presenting the potential to reduce the cost and complexity of receiver circuits. Semi-insulating InP substrates make high-speed operation practical for widely reported AlxIn1−xAsySb1−y-based APDs.
