Active and Passive Electronic Components (Jan 1993)

Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

  • S. J. Wen,
  • G. Campet,
  • J. P. Manaud

DOI
https://doi.org/10.1155/1993/13729
Journal volume & issue
Vol. 15, no. 2
pp. 67 – 74

Abstract

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Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out.