Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

Ke Han; Xubing Guo; Stewart Smith; Zhongliang Deng; Wuyu Li

doi:10.3390/mi9080390

Micromachines (Aug 2018)

Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

Ke Han,
Xubing Guo,
Stewart Smith,
Zhongliang Deng,
Wuyu Li

Affiliations

Ke Han: School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
Xubing Guo: School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
Stewart Smith: School of Engineering, University of Edinburgh, Edinburgh EH9 3FF, UK
Zhongliang Deng: School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
Wuyu Li: School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China

DOI: https://doi.org/10.3390/mi9080390
Journal volume & issue: Vol. 9, no. 8
p. 390

Abstract

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This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

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