The Influence of Argon Plasma on Organic Perovskite MAPbI<sub>3</sub> Film Doped with Inorganic Perovskite CsPbI<sub>3</sub> Quantum Dots (QDs)
Shui-Yang Lien,
Shao-Yu Liu,
Wen-Ray Chen,
Chuan-Hsi Liu,
Po-Wen Sze,
Na-Fu Wang,
Chien-Jung Huang
Affiliations
Shui-Yang Lien
Department of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Shao-Yu Liu
Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Rd., Kaohsiung 81148, Taiwan
Wen-Ray Chen
Department of Electronic Engineering, National Formosa University, Wenhua Rd., Yunlin 632301, Taiwan
Chuan-Hsi Liu
Department of Mechatronic Engineering, National Taiwan Normal University, Heping East Rd., Taipei 10610, Taiwan
Po-Wen Sze
Department of Electrical Engineering, Kao Yuan University, Zhongshan Rd., Kaohsiung 82151, Taiwan
Na-Fu Wang
Department of Electronic Engineering, Center for Environmental Toxin and Emerging–Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Kaohsiung 82146, Taiwan
Chien-Jung Huang
Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Rd., Kaohsiung 81148, Taiwan
In this study, the inorganic perovskite cesium lead triiodide (CsPbI3) quantum dots (QDs) produced by hot-injection method were added into the hybrid perovskite methylamine lead triiodide (CH3NH3PbI3; MAPbI3) to form composite perovskite film. It is not easy for argon (Ar) to react with perovskite. Therefore, argon plasma was used to optimize the properties of the surface. However, methylamine lead triiodide molecular will be degraded by excessive wattage. Therefore, the influence of plasma power acting on composite perovskite film was investigated. The experimental results show that the light absorption capacity can be increased by argon plasma power of 140 watt (W) acting on the surface of films because organic impurities are removed and surface morphology of film is changed.
