Frontiers in Nanotechnology (Nov 2021)

ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing

  • Yifu Huang,
  • Yuqian Gu,
  • Xiaohan Wu,
  • Ruijing Ge,
  • Yao-Feng Chang,
  • Xiyu Wang,
  • Jiahan Zhang,
  • Deji Akinwande,
  • Jack C. Lee

DOI
https://doi.org/10.3389/fnano.2021.782836
Journal volume & issue
Vol. 3

Abstract

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Resistive random-access memory (RRAM) devices have drawn increasing interest for the simplicity of its structure, low power consumption and applicability to neuromorphic computing. By combining analog computing and data storage at the device level, neuromorphic computing system has the potential to meet the demand of computing power in applications such as artificial intelligence (AI), machine learning (ML) and Internet of Things (IoT). Monolayer rhenium diselenide (ReSe2), as a two-dimensional (2D) material, has been reported to exhibit non-volatile resistive switching (NVRS) behavior in RRAM devices with sub-nanometer active layer thickness. In this paper, we demonstrate stable multiple-step RESET in ReSe2 RRAM devices by applying different levels of DC electrical bias. Pulse measurement has been conducted to study the neuromorphic characteristics. Under different height of stimuli, the ReSe2 RRAM devices have been found to switch to different resistance states, which shows the potentiation of synaptic applications. Long-term potentiation (LTP) and depression (LTD) have been demonstrated with the gradual resistance switching behaviors observed in long-term plasticity programming. A Verilog-A model is proposed based on the multiple-step resistive switching behavior. By implementing the LTP/LTD parameters, an artificial neural network (ANN) is constructed for the demonstration of handwriting classification using Modified National Institute of Standards and Technology (MNIST) dataset.

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