Transferable Highly (001) Oriented Sb2Se3 Nanorod Films on Flexible Substrates for Innovative Optoelectronic Devices

Abstract

Abstract Thin films of antimony chalcogenides, Sb2X3 (X = S, Se, or SxSe1−x), comprised of (001) oriented nanorods are highly desirable for optoelectronic applications owing to their light trapping capacity and highly efficient charge transport along the optimally aligned quasi‐1D (Sb4X6)n ribbons. Here, highly (001) oriented Sb2Se3 nanorod (Sb2Se3NR) layers are obtained via a novel template growth method, and transfer these layers to functional substrates via a polymer‐assisted technique. Transferable layers overcome the current challenges associated with achieving oriented growth directly on the desired substrate. Using a combination of a low‐temperature processable SnO2 nanoparticle transport layer and encapsulation/etching techniques photodetector devices are fabricated with excellent electrical contact. The optimized transferred devices show broad range photoresponse with signal‐to‐noise ratios up to 105 and responsivities reaching 0.96 mA W−1. Importantly, access to low‐temperature processing enables the fabrication of flexible devices. Based on this platform, a proof‐of‐concept self‐powered flexible heart rate monitor is fabricated. The achievement of transferable Sb2Se3NR layers introduced in this work is expected to be readily applicable to generate new (001) Sb2Se3 device architectures that may otherwise not be achievable via direct deposition, with application in photoelectrochemical water splitting, battery electrodes, and solar cells.

Keywords

• antimony selenide
• photodetectors
• solar
• transfers
• vapor transport depositions