Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets

Yanan Yuan; Daxiang Liu; Jingjing Yu; Guanhua Zhang; Xiang Chen; Ruiqi Liu; Siyu Wang; Fangfang Pei; Long Wei; Zhi Li; Junming Guo; Shouguo Wang; Zhaoliang Liao; Wensheng Yan; Ziqiang Qiu; Mengmeng Yang; Qian Li

doi:10.1063/5.0168468

APL Materials (Sep 2023)

Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets

Yanan Yuan,
Daxiang Liu,
Jingjing Yu,
Guanhua Zhang,
Xiang Chen,
Ruiqi Liu,
Siyu Wang,
Fangfang Pei,
Long Wei,
Zhi Li,
Junming Guo,
Shouguo Wang,
Zhaoliang Liao,
Wensheng Yan,
Ziqiang Qiu,
Mengmeng Yang,
Qian Li

Affiliations

Yanan Yuan: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Daxiang Liu: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Jingjing Yu: Institute of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, China
Guanhua Zhang: State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
Xiang Chen: Department of Physics, University of California, Berkeley, California 94720, USA
Ruiqi Liu: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Siyu Wang: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Fangfang Pei: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Long Wei: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Zhi Li: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Junming Guo: Institute of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, China
Shouguo Wang: School of Materials Science and Engineering Department, Anhui University, Hefei 230601, China
Zhaoliang Liao: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Wensheng Yan: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
Ziqiang Qiu: Department of Physics, University of California, Berkeley, California 94720, USA
Mengmeng Yang: Institute of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, China
Qian Li: National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China

DOI: https://doi.org/10.1063/5.0168468
Journal volume & issue: Vol. 11, no. 9
pp. 091101 – 091101-8

Abstract

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The creation of van der Waals (vdW) ferromagnets with tunable Curie temperature (TC) and magnetic anisotropy is essential in developing vdW magnet-based devices. Here, we report an effective and reliable method for modulating the magnetic properties of vdW Fe5GeTe2 by site-specific Ga+ implantation. In this study, we report an easy axis in the ab-plane for bulk Fe5GeTe2 (TC = 310 K) and an axis out of the plane for thin Fe5GeTe2 flakes (TC = 290 K). Combining element-resolved photoemission electron microscopy and spatially resolved magneto-optic Kerr microscopy, we find that the implantation of a tiny amount of 10−3 Ga+·Å−3 in Fe5GeTe2 greatly enhances the TC from 290 to 360 K and switches the magnetic easy axis from the out-of-plane c axis to the ab-plane. The room-temperature x-ray magnetic circular dichroism signal is enhanced from 0% to 9% at an implantation level of 10−2 Ga+·Å−3. These results provide new opportunities for tailoring the magnetic properties of vdW materials beyond room temperature.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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