Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)

Abstract

In this work, comparative characteristics of thin oxide films (OF) of titanium, erbium, and dysprosium formed on silicon carbide substrates in the presence and absence of a porous silicon carbide (por-SiC) layer have been considered. It has been shown that regardless of the presence of a porous buffer layer in the TiO2(Er2O3, Dy2O3)/por-SiC/SiC and TiO2(Er2O3, Dy2O3)/SiC structures, oxide layers of the approximately equal thickness are formed, and quality of the interface in OF/SiC structures is higher than that in the OF/por-SiC/SiC structures. An increase in the time and temperature of rapid thermal annealing makes it possible to improve the quality of the oxide film/substrate interface regardless of the presence of a porous buffer layer in the structure. In this case, the narrowest interface “oxide film/buffer porous layer/substrate” is observed for the TiO2 /por-SiC/SiC structures. The TiO2 /por-SiC/SiC structures are most sensitive to changes in the parameters of rapid thermal annealing, and the Er2O3/por-SiC/SiC structures are the most stable.

Keywords

• interface
• thin oxide films
• porous silicon carbide
• auger spectrometry
• optical absorption
• photoluminescence