Fushe yanjiu yu fushe gongyi xuebao (Oct 2022)
Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor
Abstract
Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with a breakdown voltage of 60 V was designed.We analyzed the radiation hardening mechanism of the heavily doped P+well and buffer layer structures using the Ta ion model (Linear energy transfer, LET=79.2 MeV·cm2/mg) with a TCAD simulation tool and verified it via an irradiation test. The results revealed that by using the heavily doped P+well and buffer layer structures, the single event burnout voltage of the high-voltage LDMOS could be improved to 60 V.
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