Thermoelectric performance of SnTe nano-films depending on thickness, doping concentration and temperature

Abstract

Tin telluride (SnTe), a promising mid-temperature thermoelectric material, faces limitations due to inherent vacancies and band characteristics. Low-dimensionalization represents one avenue to potentially improve thermoelectric performance. This work explores the SnTe films with varying thicknesses (67–610 nm) and Zn doping concentration (0–12.81%) at high temperature. A 224 nm-SnTe-film exhibits optimal ZT values (0.27 at 600 K), and the Zn-doped films experience impaired thermoelectric properties, with the electrical conductivity reduction being a primary contributor. This study contributes valuable insights for enhancing thin-film SnTe's thermoelectric performance and developing eco-friendly mid-temperature thermoelectric materials.

Keywords

• SnTe nano-film
• Zn dopant
• thermoelectric
• low thermal conductivity
• time-domain thermoreflectance method