AIP Advances (Nov 2024)

Optoelectronic and photoacoustic waves in rotating excited semiconductor subjected to thermal shock

  • Khaled Lotfy,
  • Ibrahim S. Elshazly,
  • Borhen Halouani,
  • Praveen Ailawalia,
  • Alaa A. El-Bary

DOI
https://doi.org/10.1063/5.0238907
Journal volume & issue
Vol. 14, no. 11
pp. 115010 – 115010-9

Abstract

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In this study, the impact of rotation on the transmission of optical acoustic waves, arising from the movement of the optical carrier within an elastic thermal environment, is examined through theoretical analysis. The theoretical framework incorporates the interaction between acoustic waves and thermomechanics to formulate governing equations specific to a semiconductor medium. The fundamental equations of the physical model, influenced by photothermal and thermoelastic principles, are deduced mathematically while considering the presence of rotation. The model studied the medium under a thermal shock wave from thermal stress resulting from light-induced temperature elevation that is not fixed but decaying over time. The mathematical model is solvable using the normal mode method. The model’s numerical solutions provide access to all physical fields within the physical domain, encompassing displacement, temperature, acoustic pressure, mechanical stress, and carrier density diffusion. Utilizing the harmonic wave method, a two-dimensional graphical representation of the rotation parameter with and without the influence of the decay parameter is obtained. The theoretical analysis involves comparison, analysis, and discussion of the effects of these parameters investigated.