Electronics Letters (Oct 2023)

A novel Q‐band asymmetric T/R switch in GaAs pHEMT using second‐order band‐stop filter for wideband RX‐mode isolation

  • Jia‐Shiang Fu

DOI
https://doi.org/10.1049/ell2.12962
Journal volume & issue
Vol. 59, no. 19
pp. n/a – n/a

Abstract

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Abstract To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode. Based on the proposed topology, a Q‐band asymmetric T/R switch is designed and implemented in a 0.15‐µm GaAs pHEMT technology. Measured isolation in the RX mode is greater than 18.4 dB from 31.7 to 46.3 GHz, corresponding to a 1.46:1 bandwidth.

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