Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Oct 2009)
Ultraviolet photosensors based on ZnS thin films
Abstract
High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region.