Nature Communications (Jun 2020)

Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

  • Feng-Shou Yang,
  • Mengjiao Li,
  • Mu-Pai Lee,
  • I-Ying Ho,
  • Jiann-Yeu Chen,
  • Haifeng Ling,
  • Yuanzhe Li,
  • Jen-Kuei Chang,
  • Shih-Hsien Yang,
  • Yuan-Ming Chang,
  • Ko-Chun Lee,
  • Yi-Chia Chou,
  • Ching-Hwa Ho,
  • Wenwu Li,
  • Chen-Hsin Lien,
  • Yen-Fu Lin

DOI
https://doi.org/10.1038/s41467-020-16766-9
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 11

Abstract

Read online

Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient conditions.