In this manuscript, blue light emitting diodes (LEDs) with comb-shaped mesa and interdigital electrodes structure based on gallium nitride (GaN) are presented. This kind of LEDs have showed higher light output power and more efficient current spreading, comparing with a reference large-area LED. For the optimized LED structure, the light output power and external quantum efficiency, considering the actual emission area, reach to 600 mW and 73% at a forward current of 350 mA. The experimental results are consistent with the predictions of current expansion equations. The comb-shaped mesa structure decreases the total internal reflection (TIR) and the interdigital electrodes improve the current crowding effect, as validated from the electrical and optical tests. Therefore, the efficiency and reliability of the LED devices have been significantly enhanced by reducing the transverse current path. This work should be of guiding significance for structural design of large-area/high-power optoelectronic devices.
