Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics

Jungang He; You Ge; Ya Wang; Mohan Yuan; Hang Xia; Xingchen Zhang; Xiao Chen; Xia Wang; Xianchang Zhou; Kanghua Li; Chao Chen; Jiang Tang

doi:10.1007/s12200-023-00082-3

Frontiers of Optoelectronics (Oct 2023)

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics

Jungang He,
You Ge,
Ya Wang,
Mohan Yuan,
Hang Xia,
Xingchen Zhang,
Xiao Chen,
Xia Wang,
Xianchang Zhou,
Kanghua Li,
Chao Chen,
Jiang Tang

Affiliations

Jungang He: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
You Ge: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
Ya Wang: Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology
Mohan Yuan: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
Hang Xia: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
Xingchen Zhang: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
Xiao Chen: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
Xia Wang: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
Xianchang Zhou: Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology
Kanghua Li: Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology
Chao Chen: Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology
Jiang Tang: Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology

DOI: https://doi.org/10.1007/s12200-023-00082-3
Journal volume & issue: Vol. 16, no. 1
pp. 1 – 11

Abstract

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Abstract Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices. Graphical Abstract

Published in Frontiers of Optoelectronics

ISSN: 2095-2759 (Print); 2095-2767 (Online)
Publisher: Springer & Higher Education Press
Country of publisher: Germany
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
Website: https://www.springer.com/journal/12200

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